Four-layer defects in quenched aluminium
- 1 February 1967
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 15 (134) , 229-236
- https://doi.org/10.1080/14786436708227695
Abstract
The form of vacancy clusters in quenched aluminium of 99.99% purity has been investigated using transmission electron microscopy techniques. A new four-layer planar vacancy cluster lying on parallel {111} planes has been observed and its structure has been characterized by observing both the unfaulting behaviour of the defect and the electron contrast behaviour of its component dislocations. It is argued that this defect is heterogeneously nucleated.Keywords
This publication has 12 references indexed in Scilit:
- Climb Sources in Quenched Aluminum and in Aluminum-0.5% Silver AlloyJournal of Applied Physics, 1966
- Three-layer defects in quenched aluminiumPhilosophical Magazine, 1966
- Two-Triangle Loops in Quenched AluminumJournal of Applied Physics, 1966
- Electron microscope image contrast of double loops in quenched aluminiumPhilosophical Magazine, 1966
- Formation of Double Layer Stacking Fault Dislocation LoopsJournal of the Physics Society Japan, 1965
- Faulted dislocation loops in quenched aluminiumPhilosophical Magazine, 1965
- Partial dislocations associated with NbC precipitation in austenitic stainless steelsPhilosophical Magazine, 1964
- The effect of quenching history, quenching temperature and trace impurities on vacancy clusters in aluminium and goldPhilosophical Magazine, 1963
- A New Type Aggregation of Quenched-in Vacancies in AluminumJournal of the Physics Society Japan, 1963
- Dislocation loops in quenched aluminiumPhilosophical Magazine, 1958