Single-energy, MeV implant isolation of multilayer III-V device structures

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Abstract
A single‐energy, implant isolation scheme for thick (≥1.5 μm) III‐V semiconductor device structures such as heterojunction bipolar transistors (HBTs) is described. A 5‐MeV O+ implant at doses around 1015 cm−2 produces an almost uniform damage profile over ∼2 μm, sufficient to isolate structures containing highly doped (p=7×1019 cm−3) individual layers. The heavily damaged region associated with the end of the O+ ions range is placed in the underlying semi‐insulating substrate. Resistivities above 108 Ω/⧠ are obtained in GaAs/AlGaAs HBTs with such an implant, following annealing at ∼550 °C. High‐quality, 2×5 μm2 HBTs with gains of 25 for base doping of 7×1019 cm−3 have been fabricated using this isolation scheme. A considerable simplification is achieved over the use of conventional keV implants, where up to ten separate ion energies are required to isolate an HBT structure.