Vapour phase epitaxial growth of high purity GaAs with the AsCl3-Ga-N2 system
- 2 January 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (2) , 344-349
- https://doi.org/10.1016/0022-0248(82)90452-3
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A thermodynamic factor influencing the growth rate and purity of epitaxial layers in the Ga-AsCl3-H2 systemJournal of Crystal Growth, 1978
- Thermodynamic analysis for silicon contamination of VPE GaAsJournal of Crystal Growth, 1978
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- High Purity Epitaxial GaAsJapanese Journal of Applied Physics, 1975
- Vapor-phase epitaxial growth of GaAs in a nitrogen atmosphereJournal of Applied Physics, 1974
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Chrystallization and epitaxy of GaAs from the vapour phaseJournal of Crystal Growth, 1971
- Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAsJournal of the Electrochemical Society, 1971
- Residual Impurities in High-Purify Epitaxial GaAsJournal of the Electrochemical Society, 1970
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965