Ultra-shallow junction technology for 100 nm CMOS: xR LEAP implanter and RTP-centura rapid thermal annealer
- 31 July 1998
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 54 (1-3) , 33-36
- https://doi.org/10.1016/s0254-0584(98)00066-2
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Verification of “lateral secondary ion mass spectrometry” as a method for measuring lateral dopant dose distributions in microelectronics test structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998