Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide
Open Access
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 912-915
- https://doi.org/10.1016/0022-0248(95)80072-k
Abstract
No abstract availableKeywords
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- New precursor for growing nitride filmsJournal of Materials Chemistry, 1992
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