Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas (Hydrogen Azide)
- 1 February 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (2A) , L74
- https://doi.org/10.1143/jjap.31.l74
Abstract
Silicon nitride films were deposited at temperatures as low as 350°C by chemical vapor deposition using a new source gas, hydrogen azide (HN3). Silicon nitride film deposited at 425°C was nitrogen-rich and showed hydrogen content of about 28 atomic%. The breakdown field strength was as high as 8.7 MV/cm and the resistivity was as high as 1015 Ω·cm. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transistor characteristics.Keywords
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