Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2171-2173
- https://doi.org/10.1143/jjap.29.l2171
Abstract
This letter describes that photogenerated hydrogen-radical annealing (HRA) is very effective for improving the electric properties of chemical-vapor-deposited amorphous silicon films. The ratio of photoconductivity to dark conductivity (at a light intensity of 100 mW/cm2) changed from 100 to 6×104 upon annealing in a hydrogen-radical-rich ambient at 280°C. Thin-film transistor (TFT) characteristics were also improved by HRA.Keywords
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