Gap States and ESR of Boron-Doped CVD Amorphous Silicon
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3)
- https://doi.org/10.1143/jjap.20.471
Abstract
The density distribution of the gap states in boron-doped CVD amorphous silicon has been determined by the field-effect technique. The measured density of the midgap states as high as 2×1018 cm-3eV-1 for undoped a-Si is appreciably reduced by doping with boron atoms. Electronic states arising from unpaired spins are found at energies near E v+0.30 eV, creating a bump in the gap states. The experimental results are discussed in conjunction with a divacancy model.Keywords
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