Doping and annealing effects on ESR in chemically vapor deposited amorphous silicon
- 1 January 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 29 (1) , 13-16
- https://doi.org/10.1016/0038-1098(79)90140-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Connection between ESR and electrical conduction in amorphous Si filmsSolid State Communications, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Electron Spin Resonance Studies on Ion-Implanted Silicon. I. AmorphisationJapanese Journal of Applied Physics, 1973