Studies of ZnxCd1-xS films and ZnxCd1-xS/CuGaSe2heterojunction solar cells
- 14 September 1992
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 25 (9) , 1345-1348
- https://doi.org/10.1088/0022-3727/25/9/011
Abstract
Thin film ZnxCd1-xS/CuGaSe2 heterojunction solar cells were prepared by laser evaporating CuGaSe2 onto sprayed ZnxCd1-xS films. The physical properties of ZnxCd1-xS films are discussed to study the influence of zinc content in the ZnxCd1-xS layer on the performance of the heterojunction. The photovoltaic properties of the cells were studied using illuminated current-voltage characteristics and spectral response measurements. The typical cell parameters obtained for a Zn0.5Cd0.5S/CuGaSe2 junction were Voc=710 mV, Jsc=11.8 mA cm-2, FF=0.50 with an efficiency of 4.9% on an active area of 1 cm2 without any antireflection coating.Keywords
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