Deposition of diamond-like carbon film in CH4He r.f. plasma
- 15 April 1995
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 4 (4) , 342-345
- https://doi.org/10.1016/0925-9635(94)05206-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Deposition mechanism of hydrogenated hard-carbon films in a CH4 rf discharge plasmaJournal of Applied Physics, 1992
- Influence of dc bias voltage on the refractive index and stress of carbon-diamond films deposited from a CH4/Ar rf plasmaJournal of Applied Physics, 1991
- Intrinsic stress in hydrogenated amorphous carbon prepared by rf plasma decomposition of methaneJournal of Applied Physics, 1991
- The study of mechanical properties of a-C:H films by Brillouin scattering and ultralow load indentationJournal of Applied Physics, 1989
- Monitoring of radio-frequency glow-discharge plasmaJournal of Applied Physics, 1989
- The deposition and study of hard carbon filmsJournal of Applied Physics, 1989
- De-excitation rate constants of He(2 3S) by atoms and molecules as studied by the pulse radiolysis methodChemical Physics, 1980
- Thermal energy charge transfer reactions of rare-gas ions to methane, ethane, propane, and silane. The importance of franck-condon factorsChemical Physics Letters, 1972
- Photoionization of Methane: Ionization Potential and Proton Affinity of CH4The Journal of Chemical Physics, 1971
- Ionization of CH4 and CD4 on Impact of 2 3S and 2 1S Helium AtomsThe Journal of Chemical Physics, 1968