N+-implantation induced enhanced adhesion of amorphous-SiC films deposited on stainless steel
- 21 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (8) , 977-979
- https://doi.org/10.1063/1.110924
Abstract
Amorphousa‐SiC films were deposited by rf magnetron sputtering on stainless steel and N+implantations were performed at room temperature over a fluence range of 1×1016–1×1017 ions/cm2 at 30 and 160 keV. Chemical characterization of the a‐SiC/steel interface and compositional depth profiles were obtained by Auger electron spectroscopy.Adhesion properties of the films were examined using a scratch tester in conjunction with scanning electron microscopy. A strong adhesion enhancement (about a factor of eight) along with an improvement of the fracture toughness were observed in the implanteda‐SiC/steel specimens. The key mechanisms envisaged to explain the enhanced adhesion is mainly related to the new chemical bondings, involving C and N in Si—(N,C)—Cr complexes formation at the a‐SiC/steel interface.Keywords
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