Electron and ion beam degradation effects in AES analysis of silicon nitride thin films
- 1 April 1985
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 7 (2) , 79-87
- https://doi.org/10.1002/sia.740070205
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Variation in the stoichiometry of thin silicon nitride insulating films on silicon and its correlation with memory trapsJournal of Vacuum Science and Technology, 1982
- Preferential sputtering of Si3N4Applied Physics Letters, 1981
- Impurities-related memory traps in silicon nitride thin filmsJournal of Vacuum Science and Technology, 1981
- Electron beam damage in Auger electron spectroscopyApplications of Surface Science, 1981
- Electron beam effects in Auger electron spectroscopy and scanning electron microscopySurface and Interface Analysis, 1979
- An Attempt at the AES Evaluation of the Composition of Off‐Stoichiometric Silicon NitrideJournal of the Electrochemical Society, 1977