Electrical properties of GaSb Schottky diodes and p-n junctions
- 29 February 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 12 (4) , 337-343
- https://doi.org/10.1016/0921-5107(92)90003-r
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Chemical Cleaning of GaSb (1,0,0) SurfacesJournal of the Electrochemical Society, 1989
- The effect of phosphorous and sulfur treatment on the surface properties of InPJournal of Vacuum Science & Technology B, 1988
- Electronic properties of sulfur adsorbed on cleaved GaAs surfacesJournal of Vacuum Science & Technology B, 1988
- Metals on cleaved gallium antimonide: Schottky barriers and interface reactionsJournal of Vacuum Science & Technology B, 1988
- Influence of Substrate Preparation on the Morphology of GaSb Films Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1985
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS DiodesJapanese Journal of Applied Physics, 1979
- Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiationPhysical Review B, 1978
- Interpretation of scanning electron microscope measurements of minority carrier diffusion lengths in semiconductorsInternational Journal of Electronics, 1978
- Surface and interface states of GaSb: A photoemission studyPhysical Review B, 1977