Langmuir-Blodgett electron-beam resists

Abstract
The Langmuir-Blodgett(LB) technique is a new way of applying resist to a substrate for microstructure fabrication. It provides a layer of much greater homogeneity and uniformity than is possible with conventional techniques, advantages expected to be of special importance in electron-beam lithography. The paper reviews work published in this field, which covers both positive- and negative-contrast materials. Several have characteristics which are competitive with those of existing resin resists, and chemical modifications are suggested for even greater improvement. New experimental results are presented, which show that the time required for application of an LB resist layer need not be incommensurate with that of other lithographic steps.

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