Manufacturing Process Technology for MOS VLSI
- 1 January 1981
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 78 references indexed in Scilit:
- Aluminum Etching in Carbon Tetrachloride PlasmasJournal of the Electrochemical Society, 1980
- Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitorsSolid-State Electronics, 1979
- Localized substrate heating during ion implantationJournal of Vacuum Science and Technology, 1978
- Plasma reactor design for the selective etching of SiO2 on SiSolid-State Electronics, 1976
- Elimination of Process‐Induced Stacking Faults by Preoxidation Gettering of Si Wafers: II . ProcessJournal of the Electrochemical Society, 1976
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975
- A Rutherford Scattering Study of Catalyst Systems for Electroless Cu Plating: II . Sensitization and ActivationJournal of the Electrochemical Society, 1975
- Solid-Solid Vacuum Diffusion Processes in SiliconJournal of the Electrochemical Society, 1973
- Contamination in Films Sputtered From Hot-Pressed TargetsJournal of Vacuum Science and Technology, 1971
- Electrical Properties of Copper Segregates in Silicon P-N JunctionsJournal of the Electrochemical Society, 1965