Electron trapping states in a-Si:(H,O) and a-Si:(H,N) alloys
- 1 July 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 66 (1-2) , 291-296
- https://doi.org/10.1016/0022-3093(84)90334-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Defect states in irradiated a-SiNx:HJournal of Non-Crystalline Solids, 1983
- Preparation and properties of glow-discharge deposited amorphous Si:N:H alloys from SiH4, N2, and H2 gasesJournal of Non-Crystalline Solids, 1983
- Photoemission study of hydrogenated and unhydrogenated amorphous SiNx 0 ⩽ x ⩽ 2)Journal of Non-Crystalline Solids, 1983
- Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy filmsPhysical Review B, 1983
- Nitrogen-bonding environments in glow-discharge—depositedfilmsPhysical Review B, 1983
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Electronic structure of amorphous semiconductorsAdvances in Physics, 1983
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Bulk electronic structure of SiPhysical Review B, 1979