Preparation and properties of glow-discharge deposited amorphous Si:N:H alloys from SiH4, N2, and H2 gases
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 597-600
- https://doi.org/10.1016/0022-3093(83)90654-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Defect states and donors in thermally annealed or post-hydrogenated chemically vapor-deposited amorphous SiNx alloyJournal of Applied Physics, 1983
- Properties of Chemically Vapor-Deposited Amorphous SiNx AlloysJapanese Journal of Applied Physics, 1982
- Anomalous Variations in Conductivity of a-Si: H with Nitrogen DopingJapanese Journal of Applied Physics, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977