Properties of Chemically Vapor-Deposited Amorphous SiNx Alloys
- 1 October 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (10R) , 1394
- https://doi.org/10.1143/jjap.21.1394
Abstract
Amorphous SIN x (x≦0.6) alloys were deposited by thermal decomposition of Ar/SiH4/NH3 mixtures at 550°C, and their optical and electrical properties were investigated. The optical gap energy increased quadratically from 1.5 eV to 2.0 eV with the incorporated nitrogen atom concentration. The nitrogen incorporation caused a remarkable reduction in the hopping conduction, whereas it had little effect on the extended-state conduction. The products of quantum efficiency, mobility, and lifetime were little influenced by the nitrogen incorporation.Keywords
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