Conductivity and p-n type control of fluorinated amorphous silicon (a-Si:F) without incorporating hydrogen
- 1 January 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (1) , 291-295
- https://doi.org/10.1063/1.328491
Abstract
A fluorinated amorphous‐silicon alloy (a‐Si:F) is produced by the radio frequency sputtering of silicon in mixtures of Ar and SiF4 gases. Fluorine content, infrared absorption, and temperature dependence of dark conductivity are measured and the results are interpreted in terms of the reduction of dangling bonds due to the incorporation of fluorine. n‐ and p‐type doping of this a‐Si:F is achieved by the addition of BF3 and PF5 in the sputtering gas, without incorporating hydrogen at all.This publication has 14 references indexed in Scilit:
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