Effects of Nitrogen Incorporation on Gap-State Density in Chemically Vapor-Deposited Amorphous Silicon
- 1 June 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (6A) , L377
- https://doi.org/10.1143/jjap.21.l377
Abstract
Temperature dependence of dark conductivity and field in a chemically vapor-deposited amorphous SiN x (x≃0.2) alloy are presented. The a-SiN x film exhibits little hopping conduction and large field effect as compared with undoped CVD a-Si. The gap-state density near the Fermi level in the CVD a-SiN x film is evaluated as 2×1018 cm-3 eV-1 which is one-fifth of that in an undoped film.Keywords
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