Defect states and donors in thermally annealed or post-hydrogenated chemically vapor-deposited amorphous SiNx alloy

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Abstract
Thermal annealing and post‐hydrogenation effects on the electrical properties of chemically vapor‐deposited (CVD) amorphous silicon‐nitrogen (a‐SiNx ) alloys are studied. Annealing of CVD a‐Si and a‐SiNx films causes the increases in the ESR centers, the hopping conduction, and the gap‐state density evaluated by the field‐effect method. The nitrogen incorporation reduces the number of ESR centers in a film. The Fermi level of CVD a‐SiNx films is shifted by post‐hydrogenation, which suggests that the films include donors. The ημτ products of CVD a‐Si and a‐SiNx films are increased by post‐hydrogenation, exceeding two orders of the magnitude. Post‐hydrogenated CVD a‐SiNx films show larger ημτ product than post‐hydrogenated CVD a‐Si.