Wavefront Spread of Hot Electrons Generated by Planer Tunnel Emitters
- 1 July 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (7R) , 3589
- https://doi.org/10.1143/jjap.34.3589
Abstract
For realization of quantum coherent devices which use the wavefront of the electron wave, the wavefront spread is important. To investigate the wavefront spread, the double-slit diffraction of hot electrons from a planer tunnel emitter is analyzed. Due to the statistical spread of the transverse momentum of electrons in the emitter electrode, the visibility of the diffraction pattern is less than unity. The wavefront spread is defined as the maximum spacing of the double-slit which provides visibility higher than 1/e. Dependencies of the wavefront spread on various parameters are derived. It increases when the temperature and/or the Fermi energy decreases. For example, when the Fermi energy is 5 meV, spread is 60 and 27 nm at 4 and 77 K, respectively.Keywords
This publication has 10 references indexed in Scilit:
- Proposal of novel electron wave coupled devicesApplied Physics Letters, 1990
- Quantum field-effect directional couplerApplied Physics Letters, 1990
- Electron wave interference device with vertical superlattices working in large current regionElectronics Letters, 1989
- On the possibility of transistor action based on quantum interference phenomenaApplied Physics Letters, 1989
- Electron wave optics in semiconductorsJournal of Applied Physics, 1989
- Theoretical study of electron wave diffraction caused by transverse potential grating-effect of incident angleIEEE Journal of Quantum Electronics, 1989
- Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistorApplied Physics Letters, 1988
- Novel high-speed transistor using electron-wave diffractionJournal of Applied Physics, 1987
- Novel Interference Effects between Parallel Quantum WellsPhysical Review Letters, 1985
- Possible applications of surface-corrugated quantum thin films to negative-resistance devicesThin Solid Films, 1976