Characterization of undoped high resistivity CdTe grown by a THM method
- 1 January 1977
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 12 (2) , 185-188
- https://doi.org/10.1051/rphysap:01977001202018500
Abstract
Using time of flight technique, it is shown that the level at E v + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurityKeywords
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