Formation of TiSi2 from titanium and amorphous silicon layers for local interconnect technology
- 1 March 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 197 (1-2) , 169-178
- https://doi.org/10.1016/0040-6090(91)90229-q
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- TiSi2 strap formation by Ti–amorphous-Si reactionJournal of Vacuum Science & Technology B, 1988
- The formation of an amorphous silicide by thermal reaction of sputter-deposited Ti and Si layersJournal of Applied Physics, 1988
- HPSAC—A silicided amorphous-silicon contact and interconnect technology for VLSIIEEE Transactions on Electron Devices, 1987
- Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayersJournal of Applied Physics, 1987
- Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide-semiconductor technologiesJournal of Vacuum Science & Technology B, 1985