Dose dependence of the photon emission from sputtered aluminum atoms during helium irradiation
- 1 November 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9) , 545-547
- https://doi.org/10.1063/1.89178
Abstract
Polycrystalline aluminum samples are irradiated with 40‐keV He+. At moderate target temperatures (∼0.3Tm) a prominent and distinct enhancement of the light intensity from sputtered excited aluminum atoms is observed after implantation to a critical dose of 4×1017 He+/cm2. It is shown that this effect is associated with a sudden increase in the erosion rate of Al and in the surface exfoliation due to radiation blistering. At higher target temperatures (∼0.7Tm) a less pronounced increase in the photon intensity and a different surface structure is observed.Keywords
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