Experimental evidence of the low-temperature formation of γ-In2Se3 thin films obtained by a solid-state reaction
- 1 November 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 288 (1-2) , 14-20
- https://doi.org/10.1016/s0040-6090(96)08799-8
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Electrical and optical characterization of electron beam evaporated In2Se3 thin filmsPhysica Status Solidi (a), 1995
- Effect of heat treatment on the optical properties of In2Se3thin filmsJournal of Physics D: Applied Physics, 1992
- Transformation steps of structure in flash-deposited films of a-InSeSemiconductor Science and Technology, 1990
- Zur polymorphie des In2Se3Journal of the Less Common Metals, 1988
- Electrical and Structural Properties of Amorphous In-Se Films Prepared by Flash EvaporationJapanese Journal of Applied Physics, 1985
- Raman Spectra of α‐ and γ‐In2Se3Physica Status Solidi (b), 1984
- Revised and new crystal data for indium selenidesJournal of Applied Crystallography, 1979
- Structure cristalline du séléniure d'indium In2Se3Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1978
- Phase transitions in In2Se3 as studied by electron microscopy and electron diffractionPhysica Status Solidi (a), 1975
- Mischkristallbildung der festen Lösung In2Te3−xSex(0 ≦ x ≦ 3) (Halbleitereigenschaften von Telluriden. XIV)Annalen der Physik, 1969