Inducing normally forbidden transitions within the conduction band of GaAs quantum wells
- 23 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (4) , 366-368
- https://doi.org/10.1063/1.103693
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Novel electro-optic modulation effect at 10μm wavelength in GaAs/AlGaAs quantum wellsElectronics Letters, 1989
- Spatial localization of impurities in δ-doped GaAsApplied Physics Letters, 1988
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wellsElectronics Letters, 1985
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Nonlocal exchange-correlation energy in very inhomogeneous systems: Quasi-two-dimensional electron layersPhysical Review B, 1984
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Light scattering by two-dimensional electron systems in semiconductorsSurface Science, 1982
- On the absorption of infrared radiation by electrons in semiconductor inversion layersSolid State Communications, 1976