Enhanced Migration of Implanted Sb and In in Si Covered with Evaporated Al
- 15 January 1972
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (2) , 76-77
- https://doi.org/10.1063/1.1654053
Abstract
Amorphous layers of Si produced by the bombardment of Sb+ and In+ and covered with ∼400 Å of Al show pronounced migration of the implanted atoms to the Si–Al interface and the Al surface after a 350°C anneal. This enhanced migration occurs simultaneously with the recrystallization of the amorphous layer. Low-temperature migration effects are not seen in uncoated amorphous Si, nor on reordered Si covered with evaporated Al. The depth distribution of the implanted atoms is measured by backscattering analysis with 280-keV α particles.Keywords
This publication has 3 references indexed in Scilit:
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- Enhanced Diffusion and Out-Diffusion in Ion-Implanted SiliconJournal of Applied Physics, 1970
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967