Effects of Al Films on Ion-Implanted Si
- 15 January 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (2) , 73-75
- https://doi.org/10.1063/1.1654052
Abstract
Ion-implanted amorphous regions of Si in the presence of Al films 300–700 Å thick are found to recrystallize between 325 and 350°C. This recrystallization occurs at a temperature significantly below both the epitaxial regrowth of the amorphous Si (∼ 600°C) and the Al–Si eutectic of 577°C. In the case of the 300-Å metallizations, the enhanced low-temperature reordering of the damaged layer is simultaneously accompanied by an interfacial migration which results in Si transport to the surface of the sample. The observed phenomena are analyzed as a function of anneal temperature by 280-keV α-particle backscattering and 1.8–6.2-eV optical reflectance measurements.Keywords
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