New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy
- 21 November 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (21) , 2044-2046
- https://doi.org/10.1063/1.100314
Abstract
The photoconductivity decay of an undoped amorphous silicon hydrogen alloy at different substrate temperatures is investigated. A model that attributes defect generation to recombinations through defects is used to describe the degradation kinetics. The typically observed 1/n power law decay with n close to integer can be easily explained using this model. The saturation behavior of photoconductivity suggests that the light-induced annealing process indeed exists near room temperature.Keywords
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