Physical processes in degradation of amorphous Si:H
- 31 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (13) , 846-848
- https://doi.org/10.1063/1.96687
Abstract
A critical analysis is given of possible mechanisms of light-induced degradation in amorphous Si:H (a-Si:H) and of the constraints imposed on degradation models by recent experimental observations. Using an analogy with processes in recombination-enhanced degradation of GaAs, it is shown that current intrinsic models for a-Si:H are deficient in two significant respects. It is also found that these intrinsic models cannot explain several important observations. An alternative extrinsic model is shown to be free of these deficiencies.Keywords
This publication has 9 references indexed in Scilit:
- Carrier lifetime model for the optical degradation of amorphous silicon solar cellsApplied Physics Letters, 1985
- Effects of dopants and defects on light-induced metastable states ina-Si:HPhysical Review B, 1985
- Kinetics of the metastable optically induced ESR ina-Si:HPhysical Review B, 1985
- Kinetics of the Staebler–Wronski effect in hydrogenated amorphous siliconApplied Physics Letters, 1984
- Failure of reciprocity in light-induced changes in hydrogenated amorphous silicon alloysApplied Physics Letters, 1984
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Density of States in the Gap of Tetrahedrally Bonded Amorphous SemiconductorsPhysical Review Letters, 1978
- Recombination enhanced defect reactionsSolid-State Electronics, 1978
- Theory of recombination-enhanced defect reactions in semiconductorsPhysical Review B, 1975