GaAs as a narrow-gap semiconductor

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Abstract
Conduction electrons in GaAs are described theoretically using a five-level k.p model and including effects of the electron-optic phonon interaction. The dispersion relation E(k) in the band and in the forbidden gap, the energy dependence of the effective mass and the spin g-value, as well as the resulting peculiarities of the cyclotron resonance are calculated and compared with experimental data of various authors. It is shown that the electrons in GaAs exhibit typical narrow-gap properties.

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