Elimination of thermally induced biaxial stress in GaAs on Si layers by post-growth patterning
- 1 August 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (3) , 1195-1198
- https://doi.org/10.1063/1.343462
Abstract
The biaxial tensile stress of 2.65 kbar in as‐grown GaAs/Si is reduced by post‐growth patterning of the GaAs and the reduction in stress is dependent on the pattern size and shape. For stripe patterns less than 15 μm wide the stress becomes largely uniaxial with stress relief normal to the stripe direction. Rectangular patterns exhibited stress relief in orthogonal directions, and have the lowest stress in the narrow direction of the rectangle. A 9×12 μm2 rectangle exhibited an average stress of 0.5 kbar.This publication has 16 references indexed in Scilit:
- Degradation of GaAs lasers and light-emitting diodes on silicon substratesMaterials Science and Engineering: B, 1988
- Warpage of GaAs-on-Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxyApplied Physics Letters, 1988
- Resonant photoluminescence excitation in GaAs grown directly on SiApplied Physics Letters, 1988
- Characterization of GaAs film grown on Si substrate by photoluminescence at 77 KApplied Physics Letters, 1988
- Photoluminescence studies of selective-area molecular beam epitaxy of GaAs film on Si substrateApplied Physics Letters, 1988
- Stress variations due to microcracks in GaAs grown on SiApplied Physics Letters, 1987
- Photoluminescence Study of GaAs Grown Directly on Si SubstratesJapanese Journal of Applied Physics, 1987
- Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substratesApplied Physics Letters, 1987
- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986
- Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on siliconJournal of Applied Physics, 1986