Resonant photoluminescence excitation in GaAs grown directly on Si
- 18 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (3) , 213-215
- https://doi.org/10.1063/1.100134
Abstract
We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light‐hole photoluminescence (PL) region, one identified with a free‐exciton process and the other with donor‐related transitions. Inhomogeneous line broadening was observed for the excitonic PL lines and related to stress fluctuations. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=1 ground state to an n=2 state.Keywords
This publication has 19 references indexed in Scilit:
- Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substratesApplied Physics Letters, 1987
- Photoluminescence Study of GaAs Grown Directly on Si SubstratesJapanese Journal of Applied Physics, 1987
- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Localized Excitons in CdS1−xSex Solid SolutionsPhysica Status Solidi (b), 1982
- Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorPhysical Review B, 1982
- Resonant Electronic Raman Scattering in SemiconductorsPhysical Review Letters, 1981
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974
- Free hole - neutral donor recombination in high purity GaAsSolid State Communications, 1974
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973