Ionized Impurity Scattering in n-Type Germanium and n-Type Silicon
- 1 November 1963
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 18 (11) , 1604-1611
- https://doi.org/10.1143/jpsj.18.1604
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Magnetoresistance in-Type Germanium at Low TemperaturesPhysical Review B, 1958
- Magnetoresistance Symmetry Relation in-GermaniumPhysical Review B, 1958
- Relaxation Time Anisotropy in-Type GermaniumPhysical Review B, 1958
- Galvanomagnetic Effects in Oriented Single Crystals of-Type GermaniumPhysical Review B, 1958
- Effect of Impurity Scattering on the Magnetoresistance of-Type GermaniumPhysical Review B, 1957
- High-Field Longitudinal Magnetoresistance of GermaniumPhysical Review B, 1956
- dc Magnetoconductivity and Energy Band Structure in SemiconductorsPhysical Review B, 1956
- Weak Field Magnetoresistance of-Type GermaniumPhysical Review B, 1956
- Conductivity, Hall Effect, and Magnetoresistance in-Type Germanium, and Their Dependence on PressurePhysical Review B, 1955
- Comment on Mobility Anomalies in GermaniumPhysical Review B, 1950