Electrostatics of nanowire transistors

Abstract

The electrostatics of nanowire transistors are studied by solving the Poisson equation self-consistently with the equilibrium carrier statistics of the nanowire. For a one-dimensional, intrinsic nanowire channel, charge transfer from the metal contacts is important. We examine how the charge transfer depends on the insulator and the metal/semiconductor Schottky barrier height. We also show that charge density on the nanowire is a sensitive function of the contact geometry. For a nanowire transistor with large gate underlaps, charge transferred from bulk electrodes can effectively "dope" the intrinsic, ungated region and allow the transistor to operate. Reducing the gate oxide thickness and the source/drain contact size decreases the length by which the source/drain electric field penetrates into the channel, thereby, improving the transistor characteristics.

Keywords

This publication has 11 references indexed in Scilit:

Electrostatics of coaxial schottky-barrier nanotube field-effect transistors
IEEE Transactions on Nanotechnology, 2003
High Performance Silicon Nanowire Field Effect Transistors
Nano Letters, 2003
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
Nature Materials, 2002
Carbon Nanotubes as Schottky Barrier Transistors
Physical Review Letters, 2002
Schottky Barriers in Carbon Nanotube Heterojunctions
Physical Review Letters, 2000
Role of Fermi-Level Pinning in Nanotube Schottky Diodes
Physical Review Letters, 2000
Novel Length Scales in Nanotube Devices
Physical Review Letters, 1999
Generalized scale length for two-dimensional effects in MOSFETs
IEEE Electron Device Letters, 1998
Universal Density of States for Carbon Nanotubes
Physical Review Letters, 1998
Quantum capacitance devices
Applied Physics Letters, 1988