Angle-resolved photoemission study ofGa1−xMnxAs

Valence-band dispersions in ${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{As}$ along the $\Gamma -\Delta -X$ line $\left(k\Vert \right[001\left]\right)$ are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in ${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{As}.$ These states show no clear dispersions and behave like an impurity band induced by Mn doping.