Robust optical delivery system for measuring substrate temperature during molecular beam epitaxy
- 1 January 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 17 (1) , 253-256
- https://doi.org/10.1116/1.590508
Abstract
No abstract availableKeywords
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- Variations in substrate temperature induced by molecular-beam epitaxial growth on radiatively heated substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- In Situ Substrate Temperature Measurement During MBE by Band-Edge Reflection SpectroscopyMRS Proceedings, 1993
- Infra-red transmission spectroscopy of GaAs during molecular beam epitaxyJournal of Crystal Growth, 1987