A 26ps Selective Epitaxial Bipolar Technology
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A 'self-aligned' selective MBE technology for high-performance bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A BiCMOS process utilizing selective epitaxy for analog/digital applicationsIEEE Transactions on Electron Devices, 1989