Copper, lithium, and hydrogen passivation of boron inc-Si
- 15 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (8) , 5447-5450
- https://doi.org/10.1103/physrevb.41.5447
Abstract
The geometries and chemical structures of lithium- and copper-passivated substitutional B in crystalline Si are calculated and compared to the ones of hydrogen-passivated B. The calculations are done at the approximate ab initio several clusters. In contrast to H which bridges an acceptor-Si bond and forms a stronger bond with Si than with the acceptor, Li and Cu are at the antibonding site to the boron atom, and form Li-B and Cu-B bonds. Their wave functions overlap with several host atoms. The results show that copper is a viable candidate as the observed passivator X.Keywords
This publication has 32 references indexed in Scilit:
- Hydrogen passivation of shallow acceptors and donors inc-Si: Comparisons and trendsPhysical Review B, 1989
- Microscopic structure of the hydrogen-boron complex in crystalline siliconPhysical Review B, 1989
- Structure and properties of hydrogen-impurity pairs in elemental semiconductorsPhysical Review Letters, 1989
- Donor-hydrogen complexes in passivated siliconPhysical Review B, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal siliconPhysical Review Letters, 1986
- Comment on "Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen"Physical Review Letters, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized siliconJournal of Applied Physics, 1983
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983