I n s i t u Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8) , 5210-5213
- https://doi.org/10.1063/1.326660
Abstract
In situ Auger electron spectroscopy has been combined with in situ etch‐rate measurements, using quartz crystal microbalances, to study the plasma etching of Si and SiO2 surfaces rf biased at −100 V in CF4‐H2 glow discharges. More carbon deposition was observed on the Si surface relative to the SiO2 surface as hydrogen was added to the CF4 plasma. This observation is consistent with a previously suggested model for the large SiO2‐to‐Si etch‐rate ratios observed in CF4‐H2 discharges.This publication has 6 references indexed in Scilit:
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