The growth and characterization of GaN on sapphire and silicon
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (3) , 383-387
- https://doi.org/10.1007/bf02660470
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Metalorganic Surface Chemical Adsorption Deposition of AlN Films by Ammonia and TrimethylaluminumJournal of the Electrochemical Society, 1991
- Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3Journal of Crystal Growth, 1990
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrateThin Solid Films, 1988
- Properties of Gallium NitrideMRS Proceedings, 1987
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- GaN blue light emitting diodes prepared by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
- Properties of GaN grown on sapphire substratesJournal of Materials Science, 1978
- Vapor Phase Epitaxial Growth of GaN on GaAs, GaP, Si, and Sapphire Substrates from GaBr[sub 3] and NH[sub 3]Journal of the Electrochemical Society, 1973
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969