New heterojunction InGaAsP/InP laser with high-temperature stability (T0 = 180 K)

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Abstract
This letter proposes and demonstrates the operation of a new heterojunction InGaAsP/InP laser, a double‐carrier‐confinement heterojunction (DCC‐heterojunction) laser. This laser is fabricated by incorporating a p‐InGaAsP second well layer into a p‐InP clad layer of the conventional InGaAsP/InP double‐heterojunction laser. With this laser, excellent temperature stability of threshold current [T0 is 180 K in the temperature range of 20–100 °C when threshold current varies with exp(T/T0)] and high external differential quantum efficiency (more than 45% at 100 °C) were achieved. Beam divergence perpendicular to the junction plane was also much improved (less than 25°).