1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70
- 8 November 2007
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 37 (5) , 662-665
- https://doi.org/10.1007/s11664-007-0331-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High current gain 4H-SiC npn bipolar junction transistorsIEEE Electron Device Letters, 2003
- A high current gain 4H-SiC NPN power bipolar junction transistorIEEE Electron Device Letters, 2003
- 1800 V NPN bipolar junction transistors in 4H-SiCIEEE Electron Device Letters, 2001