High current gain 4H-SiC npn bipolar junction transistors
- 22 July 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (6) , 396-398
- https://doi.org/10.1109/led.2003.813520
Abstract
The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. V/sub CEO/ of these devices is 500 V, and V/sub CBO/ is 700 V.Keywords
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