Calculation of the mobility of electrons injected in liquid xenon

A model calculation is carried out in which we evaluate the mobility of thermal electrons injected in liquid xenon. Scattering by both phonons and static density fluctuations is taken into account. The calculation for the mobility limited by phonon scattering differs from the usual calculation in crystals by considering both the local changes in the deformation potential and the changes of the amplitude of the phonons that are caused by the existence of density fluctuations. The calculation of the mobility limited by scattering from density fluctuations is carried out assuming that they give rise to a square well (or barrier) potential that will scatter the electrons. The above perturbation, Δ$V_0$, is related to a density fluctuation Δn by Δ$V_0$=$V_o$(n¯+Δn)-$V_0$(n¯). The scattering volume Ω, where the density fluctuation Δn is located, is weighted by exp(-r/ξ) where ξ is the correlation length and r is the radius of Ω. The magnitude of the different density fluctuations are weighted by exp{(Δn${)}^2$Ω/[2nS(0)]}, where S(0)=${\mathrm{nk}}_B$ ${\mathrm{TK}}_T$ and $K_T$ is the isothermal compressibility. The calculation of the mean free path is carried out using partial waves. As in the case of argon, scattering by phonons and density fluctuations give comparable contributions to the mobility. However, contrary to the case of argon, a constant effective mass that is equal to the reduced mass obtained from exciton spectra, gives rise to a calculated mobility that is in excellent agreement with the available experimental data over the whole liquid-vapor coexistence range. There are therefore no adjustable parameters in the calculation.