Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
- 16 July 2001
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 90 (3) , 1666-1668
- https://doi.org/10.1063/1.1383575
Abstract
Gain and threshold current of a self-assembled InAs/GaAs quantum-dot (QD) laser are simulated. A small overlap integral of the electron and hole wave functions in pyramidal QDs is shown to be a possible reason for the low single-layer modal gain, which limits lasing via the ground-state transition at short (under a millimeter) cavity lengths.This publication has 13 references indexed in Scilit:
- Threshold characteristics of InGaAsP/InP multiple quantum well lasersSemiconductor Science and Technology, 2000
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laserApplied Physics Letters, 1999
- Single transverse mode operation of long wavelength(~1.3 µm)InAs GaAs quantum dot laserElectronics Letters, 1999
- Spectral analysis of InGaAs/GaAs quantum-dot lasersApplied Physics Letters, 1999
- Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theoryPhysical Review B, 1999
- Temperature dependence of the threshold current density of a quantum dot laserIEEE Journal of Quantum Electronics, 1998
- Charge neutrality violation in quantum-dot lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layerIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laserSemiconductor Science and Technology, 1996
- Experimental gain characteristics and barrier lasing in strained-layer InGaAs-GaAs-AlGaAs quantum well heterostructure lasersJournal of Applied Physics, 1994