Experimental gain characteristics and barrier lasing in strained-layer InGaAs-GaAs-AlGaAs quantum well heterostructure lasers
- 15 February 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (4) , 1879-1882
- https://doi.org/10.1063/1.356333
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1992
- Cw room temperature upconversion lasing at blue, green and red wavelengths in infrared-pumped Pr 3+ -doped fluoride fibreElectronics Letters, 1991
- Wavelength switching in narrow oxide stripe InGaAs-GaAs-AlGaAs strained-layer quantum well heterostructure lasersApplied Physics Letters, 1991
- Antiguiding in narrow stripe gain-guided InGaAs-GaAs strained-layer lasersJournal of Applied Physics, 1991
- Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effectsApplied Physics Letters, 1990
- Dependence of threshold current density on quantum well composition for strained-layer InGaAs-GaAs lasers by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Operating characteristics of InGaAs/AlGaAs strained single quantum well lasersApplied Physics Letters, 1989
- Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasersElectronics Letters, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986