Dependence of threshold current density on quantum well composition for strained-layer InGaAs-GaAs lasers by metalorganic chemical vapor deposition
- 18 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (25) , 2585-2587
- https://doi.org/10.1063/1.101986
Abstract
A series of separate confinement InxGa1−xAs-GaAs (0.08<x<0.42) strained-layer quantum well lasers with 70 Å well thickness has been grown by metalorganic chemical vapor deposition. Data are presented on emission wavelengths and threshold current densities (Jth) as a function of composition. A minimum in Jth of 140 A/cm2 was observed for devices with In0.24Ga0.76As wells. The dependence of Jth on well composition is explained by a balance between strain effects and carrier confinement in the quantum well.Keywords
This publication has 19 references indexed in Scilit:
- Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thicknessApplied Physics Letters, 1989
- Two-dimensional array of high-power strained quantum well lasers with λ=0.95 μmApplied Physics Letters, 1989
- Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Long-lived InGaAs quantum well lasersApplied Physics Letters, 1989
- Low-threshold disorder-defined buried heterostructure strained-layer AlyGa1−yAs-GaAs-InxGa1−xAs quantum well lasers (λ∼910 nm)Applied Physics Letters, 1989
- InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser arrayApplied Physics Letters, 1988
- Continuous room-temperature operation of an InGaAs-GaAs-AlGaAs strained-layer laserApplied Physics Letters, 1987
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Strained-layer quantum-well injection laserApplied Physics Letters, 1984